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| Datasheet File OCR Text: |
| Product Bulletin HCT7000M January 1996 N-Channel Enhancement Mode MOS Transistor Type HCT7000M, HCT7000MTX, HCT7000MTXV Features *200mA ID *Ultra small surface mount package *RDS(ON) < 5 *Pin-out compatible with most SOT23 MOSFETS Absolute Maximum Ratings Drain-Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60 V Gate-Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40 V Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200 mA Power Dissipation (TA = 25o C) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300 mW Power Dissipation (TS(1) = 25o C) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600 mW(2) Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . -55o C to +150o C Thermal Resistance R JC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100o C/W Thermal Resistance R JA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 583o C/W Notes: (1) TS = Substrate temperature that the chip carrier is mounted on. (2) This rating is provided as an aid to designers. It is dependent upon mounting material and methods and is not measurable as an outgoing test. Description The HCT7000M is a high performance enhancement mode N-channel MOS transistor chip packaged in the ultra small 3 pin ceramic LCC package. Electrical characteristics are similar to those of the JEDEC 2N7000. The pinout and footprint matches that of most enhancement mode MOS transistors built in SOT23 plastic packages. The HCT7000M is available processed to TX and TXV levels per MIL-PRF19500. Order HCT7000MTX or HCT7000MTXV. Typical screening and lot acceptance tests are provided on page 13-4. TX and TXV products receive a VGS HTRB at 24 V for 48 hrs. at 150o C and a VDS HTRB at 48 V for 260 hrs. at 150o C. Optek Technology, Inc. 1215 W. Crosby Road Carrollton, Texas 75006 15-36 (972) 323-2200 Fax (972) 323-2396 Types HCT7000M, HCT7000MTX, HCT7000MTXV Electrical Characteristics (TA = 25o C unless otherwise noted) SYMBOL VDSS VGS(TH) IGSS IDSS ID(ON) RDS(ON) VDS(ON) Gfs Ciss Coss Crss t(on) PARAMETER Drain-Source Voltage Gate Threshold Voltage Gate Leakage Zero Gate Voltage Drain Current On-State Drain Current Drain-Source on-Resistance Drain-Source on-Voltage Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Time Turn-off Time MIN MAX UNITS 60 .8 3.0 10 1 75 5 2.5 100 60 25 5 10 10 V V nA TEST CONDITION VGS = 0 V, ID = 10 A VDS = VGS, ID = 1 mA VDS = 0 V, VGS = 15 V VGS = 0 V, VDS = 48 V VDS = 10 V, VGS = 4.5 V VGS = 10 V, ID = 0.5 A VGS = 10 V, ID = 0.5 A VDS = 10 V, ID = 0.2 A VDS = 25 V, VGS = 0 V, f = 1MHz A mA V mS pF pF pF ns ns VDD = 15 V, ID = 0.5 A, Vgen = 10 V, Rg = 25 t(off) Optek reserves the right to make changes at any time in order to improve design and to supply the best product possible. Optek Technology, Inc. 1215 W. Crosby Road Carrollton, Texas 75006 (972)323-2200 Fax (972)323-2396 15-37 |
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